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may 200 1 200 1 fairchild semiconductor corporation fdp7030bls rev b (w) fdp7030bls / fdb7030bls 30v n - channel powertrench syncfet ? general description this mosfet is designed to replace a single mosfet and parallel schottky diode in synchronous dc:dc power supplies. this 30v mosfet is designed to maximize power conversion efficiency, providing a low r ds(on) and low gate charge. the fdp7030bls includes an integrated schottky diode using fairchild?s monolithic syncfet technology. the performance of the fdp7030bls as the low - side switch in a synchronous rectifier is indis tinguishable from the performance of the fdp7030bl in parallel with a schottky diode. features 56 a, 30 v. r ds(on) = 1 0 . 5 m w @ v gs = 10 v r ds(on) = 1 6.5 m w @ v gs = 4.5 v includes syncfet schottky body diode low gate charge ( 15 nc typ ical) high performance trench technology for extremely low r ds(on) and fast switching high power and current handling capability s g d to-220 fdp series d g s to-263ab fdb series s g d absolute maximum ratings t a =25 o c unless otherwise noted symbol par ameter ratings units v dss drain - source voltage 30 v v gss gate - source voltage 20 v i d drain current ? continuous (note 1) 56 ? pulsed (note 1) 160 a p d total power dissipation @ t c = 25 c 65 w derate above 25 c 0.4 3 w / c t j , t stg operating and storage junction temperature range ? 65 to + 1 00 c t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 275 c thermal characteristics r q jc thermal resistance, junction - to - case 2.3 c/w r q ja thermal resistance, junction - to - ambient 62.5 c/w package marking and ordering information device marking device reel size tape width quantity fdb7030bls fdb7030bls 13?? 24mm 800 units fdp7030bls fdp7030bls tub e n/a 45 fdp7030bls/fdb7030bls
fdp7030bls rev b (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain ? source breakdown voltage v gs = 0 v, i d = 1 ma 30 v d bv dss d t j breakdown voltage temperature coefficient i d = 1 0 ma, referenced to 25 c 2 2 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 500 a i gssf gate ? body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate ? body leakage, reverse v gs = ? 20 v v ds = 0 v ? 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 1 2 .3 3 v d v gs(th) d t j gate threshold voltage temperature coefficient i d = 1 ma, referenced to 25 c ? 4.4 mv/ c r ds(on) static drain ? source on ? resistance v gs = 10 v, i d = 28 a v gs = 4.5 v, i d = 23 a v gs =10 v, i d = 28a , t j = 1 00 c 8.6 13.2 1 2.4 1 0 .5 1 6.5 16. 5 m w i d(on) on ? state drain current v gs = 10 v, v ds = 5 v 50 a g fs forward transconductance v ds = 5 v, i d = 28 a 47 s dynamic characteristics c iss input capacitance 1708 pf c oss output capacitance 474 pf c rss reverse transfer capacitan ce v ds = 15 v, v gs = 0 v, f = 1.0 mhz 134 pf switching characteristics (note 2) t d (on) turn ? on delay time 11 21 ns t r turn ? on rise time 8 16 ns t d ( off ) turn ? off delay time 30 48 ns t f turn ? off fall time v ds = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 w 16 29 ns q g total gate charge 15 21 nc q gs gate ? source charge 7 nc q gd gate ? drain charge v ds = 15 v, i d = 28 a v gs = 5 v 5 nc drain ? source diode characteristics and maximum ratings i s maximum continuous drain ? source diode forward cur rent 3.5 a v sd drain ? source diode forward voltage v gs = 0 v, i s = 3.5 a (note 1) v gs = 0 v, i s = 7 a (note 1) 0 .44 0.60 0.7 v t rr diode reverse recovery time 20 ns q rr diode reverse recovery charge i f = 11.5a, d if /d t = 300 a/s (note 2) 20 nc notes: 1. pulse test: pulse width < 300 m s, duty cycle < 2.0% 2. see ?syncfet schottky body diode characteristics? below. fdp7030bls/fdb7030bls
fdp7030bls rev b (w) typical characteristics 0 30 60 90 120 0 1 2 3 4 5 v ds , drain-source voltage (v) i d , drain current (a) 4.0v 5.0v v gs = 10v 4.5v 6.0v 0.8 1 1.2 1.4 1.6 1.8 2 0 20 40 60 80 100 120 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 4.5v 5.0v 6.0v 8.0v 7.0v 10v figure 1. on - region characteristics. figure 2. on - resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 28a v gs =10v 0.01 0.02 0.03 0.04 2 4 6 8 10 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 14a t a = 100 o c t a = 25 o c figure 3. on - resistance variation with temperature. figure 4. on - resistance variation with gate - to - source voltage. 0 10 20 30 40 50 60 2 2.5 3 3.5 4 4.5 5 v gs , gate to source voltage (v) i d , drain current (a) t a = 55 o c 25 o c 100 o c v ds = 5v 0.001 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 100 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteri stics. figure 6. body diode forward voltage variation with source current and temperature. fdp7030bls /fdb7030bls
fdp7030bls rev b (w) typical characteristics (continued) 0 2 4 6 8 10 0 5 10 15 20 25 30 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 28a v ds = 5v 15v 10v 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 1 10 100 1000 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 1s 100m r ds(on) limit v gs = 10v single pulse r q ja = 2.3 o c/w t a = 25 o c 10ms 10s 50s 0 1000 2000 3000 4000 5000 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q ja = 2.3c/w t a = 25c figure 9. maximum safe operating area. figure 10. single p ulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), normalized effective transient thermal resistance r q ja (t) = r(t) + r q ja r q ja = 2.3 c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. fdp7030bls/fdb7030bls
fdp7030bls rev b (w) typical characteristics (continued) syncfet schottky body diode characteristics fairchild?s syncfet process embeds a schottky diode in parallel with powertrench mosfet. this diode exhibits similar characteristics to a discrete external schottky diode in parallel with a mosfet. figure 12 fdp7030bls. figure 12. fdp7030bls syncfet body diode reverse recovery characteristic. for comparison purposes, figure 13 shows the rever se recovery characteristics of the body diode of an equivalent size mosfet produced without syncfet (fdp7030bl). figure 13. non - syncfet (fdp7030bl) body diode reverse recovery characteristic. schottky barrier diodes exhibit s ignificant leakage at high temperature and high reverse voltage. this will increase the power in the device. figure 14. syncfet diode reverse leakage versus drain - source voltage and temperature. 0.00001 0.0001 0.001 0.01 0.1 0 10 20 30 v ds , reverse voltage (v) i dss , reverse leakage current (a) t a = 100 o c t a = 25 o c fdp7030bls/fdb7030bls time: 10n s /div current: 0.8a/div current: 0.8a/div time: 10n s /div
to-220 tube packing data august 1999, rev. b 0.165 to-220 tube packing configuration: figur e 1.0 note/comments packaging option to-220 packaging information stan da rd (no f l ow code ) packaging type rail/tube qty per tube/box 45 box dimension (mm) 530x 130x 83 max qty per box 1,080 weight per unit (gm) 1.4378 s62z bulk 300 114x 102x 51 1,500 1.4378 fscint label fscint label 114mm x 102mm x 51mm eo70 immediate box 530mm x 130mm x 83mm intermediate box 300 units per eo70 box 5 eo70 boxe s per per interm ediate bo x 1500 uni ts maximum quantity per intermediate box an ti-stati c bubbl e sheets 45 units per tube conduct ive plastic bag 1080 uni ts maximum quantity per box 530mm x 130mm x 83mm intermediate box fscint label 12 tubes per bag note: all dim ensions are in inches f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l 1.300 .015 0.080 0.032 .003 0.275 0.275 0.160 0.800 0.450 .030 20.000 +0.031 -0.065 0.123 +0.001 -0.003 l ot: cbvk741b019 nsid: fdp7060 d/c1: d9842 spec rev: b2 spec: qty: 1080 qa rev: fairchild semiconductor corporation htb:b (fscint) fscint labe l samp le to-220 tube configuration: figure 4.0 to-220 packaging information: figure 2.0 to-220 bulk packing configuration: figure 3.0 2 bags per box packaging description: to-220 parts are ship ped normally in tube. the tube is made of pvc plastic treated with anti -stati c agent.these tubes in standard option are placed inside a dissipative plastic bag, barcode labeled, and placed inside a box made of recy cl ab le corrug ated pa pe r. on e b ox c on tai ns two ba gs max im um (see fi g. 1.0). and o ne or several o f these boxes are placed inside a labeled shipp ing bo x wh ic h c om es in d ifferen t si zes de pe ndi n g o n th e nu mber of parts ship ped. the other option comes in bulk as described in the packagin g information table. the unit s in this option are placed inside a small box laid w ith anti- static bubble sheet. these smaller boxes are individually labeled and placed ins ide a larger box (see fig. 3.0). these larger or intermediate boxes then will b e placed finally inside a labeled shipping box whic h still comes in different sizes depending on the number of units shipped. ?2000 fairchild semiconductor international
1 : 1 scale 1:1 on letter size paper dime nsio ns shown bel ow are in: inches [millimeters] to-220 (fs pkg code 37) part weight per unit (gram): 1.4378 to-220 package dimensions september 1998, rev. a ?2000 fairchild semiconductor international
to-263ab/d 2 pak packaging configuration: figure 1.0 components to-263ab/d 2 pak tape leader and trailer configuration: figure 2.0 cover tape carrier tape note/comments packaging option to-263ab/d 2 pak packaging information standard (no flow code) l86z packaging type reel size tnr 13" dia rail/tube - qty per reel/tube/bag 800 45 box dimension (mm) 346x346x70 530x130x83 max qty per box 800 1,080 weight per unit (gm) 1.4378 1.4378 weight per reel 1.6050 - moisture sensitive label drypack bag esd label f63tnr label 346mm x 346mm x 70mm standard intermediate box to-263ab/d 2 pak unit orientation fdb603al f 9835 fdb603al f 9835 fdb603al f 9835 fdb603al f 9835 f63tnr label sample static dissipative embossed carrier tape f63tnr label antistatic cover tape caution moisture sensitive label customized label lot: cbvk741b019 fsid: fdb6320l d/c1: d9842ab qty1: spec rev: spec: qty: 800 d/c2: qty2: cpn: n/f: f (f63tnr)3 leader tape 1520mm minimum or 95 empty pockets trailer tape 400mm minimum or 25 empty pockets packaging description: to-263/d 2 pak parts are shipped in tape. the carrier tape is made from a dissipative (carbon filled) polycarbonate resin. the cover tape is a multilayer film (heat activated adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. these reeled parts in standard option are shipped with 800 units per 13" or 330cm diameter reel. the reels are dark blue in color and is made of polystyrene plastic (anti- static coated). this and some other options are further described in the packaging information table. these full reels are individually barcode labeled, dry packed, and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. one box contains one reel maximum. and these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. embossed esd marking attention observe precautions for handling electrostatic sensitive devices embossed esd marking attention observe for handling electrostatic sensitive devices attention observe for handling electrostatic sensitive devices a ttention obser ve for handling a ttention obser ve for handling a ttention obser ve preca utions for handling electr ost a tic sensitive devices to-263ab/d 2 pak tape and reel data january 2001, rev. c ?2001 fairchild semiconductor corpooration
p1 a0 d1 p0 f w e1 d0 e2 b0 tc wc k0 t dimensions are in inches and millimeters tape size reel option dim a dim b dim c dim d dim n dim w1 dim w2 dim w3 (lsl-usl) 24mm 13" dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.961 +0.078/-0.000 24.4 +2/0 1.197 30.4 0.941 ? 0.1.079 23.9 ? 27.4 see detail aa dim a max 13" diameter option dim a max w3 w2 max measured at hub w1 measured at hub dim n dim d min dim c b min detail aa notes: a0, b0, and k0 dimensions are determined with respect to the eia/jedec rs-481 rotational and lateral movement requirements (see sketches a, b, and c). 10 deg maximum component rotation 0.5mm maximum 0.5mm maximum sketch c (top view) component lateral movement typical component cavity center line 10 deg maximum typical component center line b0 a0 sketch b (top view) component rotation sketch a (side or front sectional view) component rotation user direction of feed to-263ab/d 2 pak embossed carrier tape configuration: figure 3.0 to-263ab/d 2 pak reel configuration: figure 4.0 dimensions are in millimeter pkg type a0 b0 w d0 d1 e1 e2 f p1 p0 k0 t wc tc t d 2 pak o263ab/ (24mm) 10.60 +/-0.10 16.70 +/-0.20 24.0 +/-0.3 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 22.25 min 11.50 +/-0.10 16.0 +/-0.1 4.0 +/-0.1 4.90 +/-0.10 0.450 +/-0.150 21.0 +/-0.3 0.06 +/-0.02 to-263ab/d 2 pak tape and reel data, continued january 2001, rev. c
to-263ab/d 2 pak (fs pkg code 45) to-263ab/d 2 pak package dimensions august 1998, rev. a 1:1 scale 1:1 on letter size paper dimensions shown below are in: inches [millimeters] part weight per unit (gram): 1.4378 ?2000 fairchild semiconductor international
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. optoplanar? pacman? pop? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher smart start? stealth? fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? rev. h2 ? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? ultrafet vcx? ? ? ?

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